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參數(shù)資料
| 型號： | 2SD2358 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 1000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 45K |
| 代理商： | 2SD2358 |
Transistors
2SD2358
Silicon NPN epitaxial planer type
1
For low-frequency output amplification
Complementary to 2SB1538
I
Features
Low collector to emitter saturation voltage
V
CE(sat)
:
<
0.15 V
Allowing supply with the radial taping
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
10
V
Collector to emitter voltage
10
V
Emitter to base voltage
V
EBO
I
CP
I
C
5
V
Peak collector current
1.2
A
Collector current
1
A
Collector power dissipation
*
P
C
T
j
T
stg
1
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CEO
V
CB
=
7 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
2 V, I
C
=
100 mA
I
C
=
500 mA, I
B
=
20 mA
V
CB
=
5 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0
, f
=
1 MHz
1
μ
A
Collector to base voltage
10
V
Collector to emitter voltage
10
V
Emitter to base voltage
V
EBO
h
FE
V
CE(sat)
5
V
Forward current transfer ratio
200
800
Collector to emitter saturation voltage
0.15
V
Transition frequency
f
T
C
ob
120
MHz
Collector output capacitance
30
pF
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+
0.1
0.05
0
+
0
0
3
2
1
1.2
±
0.1
0.65
0.45
0.1
+
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Note)*: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
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