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參數資料
| 型號： | 2SD2403-GZ-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 137K |
| 代理商： | 2SD2403-GZ-AZ |
1998
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The
2SD2403
is
a
transistor
featuring
high
current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
5.0
A
Base current (DC)
IB(DC)
0.2
A
Base current (pulse)
IB(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
0.4
A
Total power dissipation
PT
16 cm
2
× 0.7 mm ceramic board mounted
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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| 2SD2403-GZ-AZ | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2403-GX-AZ | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2403-GX | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2415-C | SMALL SIGNAL TRANSISTOR |
| 2SD2415-D | SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2403-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 60V 3A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,3.0A,P-MINI MOLD3 |
| 2SD2403-T1-AZ(GY) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD2403-T1-AZ-GZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2406-Y(F) | 功能描述:兩極晶體管 - BJT NPN 80V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2406-YF | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220NIS |
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