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參數資料
| 型號： | 2SD2415 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 112K |
| 代理商： | 2SD2415 |
2002
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2402 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
8.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2420P | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SD2420Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2431 | TRANSISTOR | BJT | DARLINGTON | NPN | 180V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2440BL | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-247VAR |
| 2SD2440GR | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-247VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2420AP | 功能描述:TRANS NPN 80VCEO 4A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2425-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,5.0A,MP-2 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) MP-2 T/R |
| 2SD2425-T1-AZ-AB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2436 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2438 | 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 8A TO3PF |
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