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參數資料
| 型號： | 2SD2463K |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 31V V(BR)CEO | 2A I(C) | SIP |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 31V五（巴西）總裁|甲一（c）|園區 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 112K |
| 代理商： | 2SD2463K |
2002
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2402 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
8.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC |
| 2SD2470TP | 功能描述:達林頓晶體管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2480(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 110V 6A 30W BCE |
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