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參數資料
| 型號： | 2SD2474 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-62, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SD2474 |
1
Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–10
–10
–7
–2.4
–2
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –7V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= 200mA
I
C
= –1A, I
B
= –10mA
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –6V, I
E
= 0, f = 1MHz
min
–10
–10
–7
200
typ
– 0.19
60
100
max
–1
800
– 0.25
Unit
μ
A
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
2F
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相關代理商/技術參數 |
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| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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| 2SD2499 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: B1BAER000011 |
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