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參數(shù)資料
型號: 2SD2492D
英文描述: TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
中文描述: 晶體管|晶體管| npn型| 200伏五(巴西)總裁| 100mA的一(c)|至126
文件頁數(shù): 1/6頁
文件大小: 112K
代理商: 2SD2492D
2002
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2402 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
10 ms
duty cycle
50 %
8.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
10 ms
duty cycle
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
相關(guān)PDF資料
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2SD2497
2SD2402EZ TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 5A I(C) | TO-243
2SD2406O TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
2SD2406Y TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
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