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參數資料
| 型號： | 2SD2533 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SD2533 |
1
Power Transistors
2SD2523
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
Incorporating a built-in damper diode
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Reverse peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP*
I
BP
I
BP
P
C
T
j
T
stg
Ratings
1700
1700
5
6
15
4
–3
90
3
150
–55 to +150
Unit
V
V
V
A
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
*
Non-repetitive peak
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1.6A
I
C
= 5A, I
B
= 1.6A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5A, I
Bend
= 1.6A, L
leak
= 5
μ
H
I
C
= 6A, I
B
= 0
min
5
6
3
typ
3
max
50
1
25
10
5
1.5
12
0.8
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
V
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
C
B
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2536(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 115V 2A 3-Pin LSTM |
| 2SD2537T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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