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參數資料
| 型號： | 2SD2544Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 190K |
| 代理商： | 2SD2544Q |
Power Transistors
371
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Allowing supply with the radial taping
I Absolute Maximum Ratings T
C
= 25°C
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Unit: mm
I Electrical Characteristics T
C
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 7 V, IC = 0
10
A
Collector to emitter voltage
VCEO
IC = 10 mA, IB = 0
60
V
Forward current transfer ratio
hFE1 *
VCE = 2 V, IC = 0.8 A
500
1 000
2 000
hFE2
VCE = 2 V, IC = 2 A
60
Collector to emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 50 mA
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 50 mA
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
70
MHz
Turn-on time
ton
IC = 2 A, IB1 = 50 mA, IB2 =
50 mA,
0.5
s
Storage time
tstg
VCC = 50 V
3.6
s
Fall time
tf
1.1
s
Note) *: Rank classification
Rank
Q
P
hFE1
500 to 1 200 800 to 2 000
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7V
Peak collector current
ICP
8A
Collector current
IC
4A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
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| 2SD25490P | 功能描述:TRANS NPN LF 80VCEO 3A TO-220D RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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