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參數資料
| 型號： | 2SD2696 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency transistor (for amplification) |
| 中文描述： | 低（頻率為放大晶體管） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 50K |
| 代理商： | 2SD2696 |
2SD2696
Transistors
Low frequency transistor (for amplification)
2SD2696
z
Structure
NPN Silicon Epitaxial Planar Transistor
z
Features
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
V
CE (sat)
: max. 300mA at I
C
= 100mA / I
B
= 2mA
z
Applications
Switching
z
Packaging specifications
z
Inner circuit
1/1
z
External dimensions
(Unit : mm)
(1) Base
(2) Emitter
(3) Collector
VMT3
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.40.4
1
0
0
0
(2)
(1)
Abbreviated symbol : UH
(1) Base
(3) Collector
(2) Emitter
Package
Code
Taping
T2L
8000
Basic ordering unit (pieces)
2SD2696
Type
z
Absolute maximum ratings
(Ta=25
°
C)
1
2
Parameter
V
V
V
V
CBO
V
CEO
V
EBO
Symbol
mA
mA
I
C
I
CP
P
D
Tj
Tstg
mW / TOTAL
°
C
°
C
Limits
30
30
6
400
800
150
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Pw
=
10ms, Single pulse
2 Each terminal mounted on a recommended land.
z
Electrical characteristics
(Ta=25
°
C)
150
55 to
+
150
Parameter
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
C
ob
Min.
30
30
6
270
Typ.
120
400
3.0
Max.
100
100
300
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
I
C
=1mA
I
C
=10
μ
A
I
E
=10
μ
A
V
CB
= 30V
V
EB
= 6V
I
C
=100mA, I
B
= 2mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
E
=
100mA, f=100MHz
V
CB
=10V, I
E
= 0A, f=1MHz
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| 2SD2696T2L | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2700TL | 功能描述:兩極晶體管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2701TL | 功能描述:兩極晶體管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2702TL | 功能描述:兩極晶體管 - BJT 12V 1.5A NPN LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2703TL | 功能描述:兩極晶體管 - BJT 30V 1A NPN LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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