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參數資料
| 型號： | 2SD602 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 40K |
| 代理商： | 2SD602 |
1
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB710 and 2SB710A
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1
500
200
150
–55 ~ +150
Unit
V
V
V
A
mA
mW
C
C
2SD602
2SD602A
2SD602
2SD602A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA
*2
, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
40
typ
160
0.35
200
6
max
0.1
340
0.6
15
Unit
μ
A
V
V
V
V
MHz
pF
*2
Pulse measurement
2SD602
2SD602A
2SD602
2SD602A
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2SD602
WQ
WR
WS
2SD602A
XQ
XR
XS
Marking symbol :
W
(2SD602)
X
(2SD602A)
Marking
Symbol
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD602A | Silicon NPN epitaxial planer type |
| 2SD613P | 85V/6A,AF 35 to 45W Output Applications |
| 2SB633P | 85V/6A,AF 35 to 45W Output Applications |
| 2SD620 | Silicon N-Channel MOS FET |
| 2SK620 | Silicon N-Channel MOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD602_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD602A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD602AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD602AR | 制造商:NEC 功能描述:2SD602A-R |
| 2SD602A-R | 制造商:NEC 功能描述:2SD602A-R |
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