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參數資料
| 型號： | 2SD637S |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 100mA的一（c）|律師- 71 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SD637S |
Transistors
1
Publication date: January 2003
SJC00191CED
2SD0602A (2SD602A)
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0710A (2SB710A)
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
500
mA
Peak collector current
ICP
1A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 150 mA
85
340
hFE2
VCE = 10 V, IC = 500 mA
40
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 300 mA, I
B
= 30 mA
0.35
0.6
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Rank
Q
R
S
No rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Marking symbol X
Product of no-rank is not classified and have no indication for rank.
Note) The part number in the parenthesis shows conventional part number.
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| 2SD734F | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-92 |
| 2SD734G | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD637-S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD638 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD638R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD639 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For medium-power general amplification) |
| 2SD639-QRS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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