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參數資料
| 型號： | 2SD669-C-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 274K |
| 代理商： | 2SD669-C-BP |
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1mAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=160Vdc, IE=0)
---
10
uAdc
IEBO
Emitter Cutoff Current
(VEB=4Vdc, IC=0)
---
10
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=150mAdc, VCE=5Vdc)
hFE-2
DC Current Gain
(IC=500mAdc, VCE=5Vdc)
30
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
1.0
Vdc
VBE
Base-Emitter Saturation Voltage
(VCE=5Vdc, IC=150mAdc)
---
1.5
Vdc
f
Transition Frequency
(VCE=5Vdc, IC=150mAdc)
CLASSIFICATION OF HFE
Rank
B
C
D
Range 2SD669
60-120
100-200
160-320
Revision: A
2011/01/01
omponents
20736 Marilla Street Chatsworth
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M C C
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Micro Commercial Components
www.mccsemi.com
1 of 2
120
Vdc
2SD669
2SD669A
---
160
Vdc
---
180
Vdc
---
2SD669
2SD669A
60
320
200
---
T
140(TYP)
MHz
C
Collector output capacitance
(VCB=10Vdc, IE=0,f=1MHz)
14(TYP)
pF
ob
2SD669A
60-120
100-200
2SD669(A)-C
2SD669-D
2SD669(A)
2SD669(A)-B