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參數(shù)資料
| 型號(hào)： | 2SD874Q |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 639K |
| 代理商： | 2SD874Q |
2SD874
NPN Silicon
Power Transistors
Features
With SOT-89 package
Power amplifier applications
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector power dissipation
500
mW
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Type
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=2mAdc, IB=0)
25
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
30
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
5
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=20Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=4Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=500mAdc, VCE=10Vdc)
(IC=1.0Adc, VCE=5Vdc)
85
50
---
340
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
0.4
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc,IB=50mAdc)
---
1.2
Vdc
fT
Transistor Frequency
(IC=50mAdc, VCE=10Vdc, f=200MHz)
---
200
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
---
20
---
pF
Classification OF hFE(1)
Rank
Q
R
S
Range
85-170
120-240
170-340
Marking
ZQ
ZR
ZS