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參數資料
| 型號： | 2SD875 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SD875 |
1
Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
I
Features
G
Large collector power dissipation P
C
.
G
High collector to emitter voltage V
CEO
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA
*2
, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
130
50
typ
100
0.2
0.85
120
11
max
0.1
330
0.4
1.2
Unit
μ
A
V
V
V
V
V
MHz
pF
Marking symbol :
X
*1
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 220
185 ~ 330
Marking Symbol
XR
XS
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
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PDF描述 |
|---|---|
| 2SD878 | HIGH POWER AMPLIFIER APPLICATIONS |
| 2SD888 | High hff,AF Power Amplifier |
| 2SD889 | 2SD889 |
| 2SD893 | S |
| 2SD893A | S |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD875R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243 |
| 2SD875S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243 |
| 2SD876 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Epitaxial Planar |
| 2SD876P | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Epitaxial Planar |
| 2SD876Q | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Epitaxial Planar |
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