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參數資料
| 型號： | 2SD880-Q |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 81K |
| 代理商： | 2SD880-Q |
2SD880
NPN Silicon
Power Transistors
Features
With TO-220 package
Power amplifier applications
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
PC
Collector power dissipation
1.5
W
TJ
Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Type
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
7
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
---
100
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0)
---
100
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=500mAdc, VCE=5Vdc)
60
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc)
---
1
Vdc
VBE
Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc)
---
1
Vdc
fT
Transistor Frequency
(IC=500mAdc, VCE=5Vdc)
---
3
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
---
70
---
pF
ton
Turn on time
---
0.8
---
us
ts
Storage time
---
1.5
---
us
tf
Fall time
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us
---
0.8
---
us
Classification OF hFE(1)
Rank
Q
Y
GR
Range
60-120
100-200
150-300
INCHES
MM