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參數資料
| 型號： | 2SD969 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) |
| 中文描述： | 硅外延龍門進步黨（進步黨外延硅平面型） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SD969 |
1
Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD969
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
C
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–25
–20
–7
90
25
typ
150
15
max
–100
–1
220
– 0.4
–1.2
25
Unit
nA
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
*2
Pulse measurement
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB793 | Si PNP Epitaxial Planar |
| 2SB793A | Si PNP Epitaxial Planar |
| 2SB819 | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 2SB861B | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD970 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD970(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 8A I(C) | TO-220AB |
| 2SD970K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD970K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD971 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MT-25300V 6A 50W BCE |
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