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參數(shù)資料
型號(hào): 2SJ105
元件分類(lèi): 小信號(hào)晶體管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: 2-4E1B, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 153K
代理商: 2SJ105
2SJ105
2003-03-25
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
Complimentary to 2SK330
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
-10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 mA
50
V
Drain current
IDSS
(Note)
VDS = -10 V, VGS = 0
-1.2
-14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = -10 V, ID = -0.1 mA
0.3
6.0
V
Forward transfer admittance
Yfs
VDS = -10 V, VGS = 0, f = 1 kHz
1.0
4.0
mS
Drain-source ON resistance
RDS (ON)
VDS = -10 mV, VGS = 0
IDSS = -5 mA
270
W
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
18
pF
Reverse transfer capacitance
Crss
VDG = -10 V, ID = 0, f = 1 MHz
3.6
pF
Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ105_07 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ105BL 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 6MA I(DSS) | SPAK
2SJ105-BL(F) 制造商:Toshiba America Electronic Components 功能描述:Trans JFET P-CH 14mA Si 3-Pin 2-4E1B
2SJ105GR 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK
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