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參數資料
| 型號： | 2SJ243 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR SWITCHING |
| 中文描述： | P溝道MOS場效應管的開關 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 61K |
| 代理商： | 2SJ243 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
1
0
G
0.2
+0.1
–0
0.5
0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
The 2SJ243 is a P-channel vertical type MOS FET that is driven
at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SJ243 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
Can be directly driven by 3-V IC
Can be automatically mounted
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
–30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
7
A
Drain Current (DC)
I
D(DC)
±
100
mA
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
±
200
mA
Total Power Dissipation
P
T
3.0 cm
2
×
0.64 mm, ceramic substrate used
200
mW
Channel Temperature
T
ch
150
C
Operating Temperature
T
opt
–55 to +80
C
Storage Temperature
T
stg
–55 to +150
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ243-T1(A) | 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SJ243-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,55ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SJ244 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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