- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369193 > 2SJ273 (Sanyo Electric Co.,Ltd.) Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) PDF資料下載
參數(shù)資料
| 型號： | 2SJ273 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) |
| 中文描述： | 超高速開關(guān)應(yīng)用P溝道MOSFET的硅（超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET的） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 90K |
| 代理商： | 2SJ273 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
2SJ273
Ultrahigh-Speed Switching Applications
Ordering number:EN4748
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/11195TS (KOTO) BX-1175 No.4748–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2063A
[2SJ273]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating easy mounting.
C
C
Electrical Characteristics
at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
PW
≤
10
μ
s, duty cycle
≤
1%
Continued on next page.
Tc=25
°
C
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1 2
3
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
e
g
g
a
V
a
V
)
C
D
s
P
(
e
e
(
c
o
c
o
t
t
S
S
-
D
-
G
n
D
n
D
V
V
S
S
S
S
D
G
ID
IP
D
0
0
6
4
0
2
–
2
1
±
–
V
V
A
A
W
W
e
C
e
C
)
–
0
2
5
1
5
1
+
n
o
p
s
D
r
w
o
P
e
a
w
o
PD
5
0
0
e
p
e
p
m
m
e
e
T
T
l
n
e
g
n
a
h
a
S
C
h
c
T
g
T
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
1
–
±
m
p
x
a
m
e
e
g
g
a
V
a
V
t
e
C
e
C
n
n
w
w
o
o
d
d
k
k
n
D
a
k
a
a
a
e
B
e
B
e
g
e
L
e
e
c
o
c
o
a
V
e
G
c
o
S
-
G
a
V
f
C
d
w
r
F
S
S
-
D
-
G
-
Z
V
V
S
S
S
S
D
G
S
S
S
)
S
s
)
)
S
R
R
D
G
G
|
B
B
I
I
(
(
ID
IG
VS
D
VS
G
VS
D
VS
D
ID
=
ID
=
V
A
V
0
V
6
V
0
V
0
1
–
V
,
A
4
–
,
A
4
–
,
A
0
0
1
–
1
±
=
1
–
=
=
m
0
1
1
=
–
±
=
=
S
D
V
V
D
D
D
S
=
S
=
G
V
,
0
=
0
0
0
2
V
V
A
μ
A
μ
V
S
,
μ
S
G
S
–
=
–
=
–
–
0
=
0
m
A
V
=
S
=
1
4
0
V
4
0
0
0
0
1
1
±
0
–
–
t
e
g
e
,
e
r
n
g
V
I
I
A
0
–
5
e
c
n
a
m
d
A
a
T
|
5
2
3
e
c
n
a
e
R
e
S
-
N
O
e
c
o
S
-
D
c
S
R
R
)
)
o
S
o
S
D
D
G
G
1
2
3
4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ275FD | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ277FD | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SJ279 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ279(L) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ279(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ274 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ275 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ275FD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB |
| 2SJ276 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ277 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。