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參數(shù)資料
| 型號： | 2SJ312(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 385K |
| 代理商： | 2SJ312(2-10S2B) |
2SJ312
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSIV)
2SJ312
DCDC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 80 m (typ.)
High forward transfer admittance
: |Yfs| = 8.0 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
14
Drain current
Pulse(Note 1)
IDP
56
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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