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參數資料
| 型號： | 2SJ313-O |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 235K |
| 代理商： | 2SJ313-O |
2SJ313
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
1
A
Power dissipation (Tc = 25°C)
PD
25
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
―
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
―
V
Gatesource cutoff voltage (Note 2)
VGS (OFF)
VDS = 10 V, ID = 10 mA
0.8
―
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
―
1.2
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
―
0.7
―
S
Input capacitance
Ciss
―
210
―
Output capacitance
Coss
―
90
―
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
―
45
―
pF
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is the electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
J313
Part No. (or abbreviation code)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ313Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-220AB |
| 2SJ313-Y(Q) | 制造商:Toshiba 功能描述:Pch -180V -1A TO220NIS |
| 2SJ314-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ314-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ314-01LSC | 制造商:Fuji Electric 功能描述: |
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