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參數資料
| 型號： | 2SJ314-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | TO-251, SC-64, KPAK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 146K |
| 代理商： | 2SJ314-01L |
1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
-60
Drain-gate voltage (RGS=20k
Ω)VDGR
-60
Continuous drain current
ID
-5
Pulsed drain current
ID(puls]
-20
Gate-source voltage
VGS
±20
Max. power dissipation
PD
20
Operating and storage
Tch
+150
temperature range
Tstg
2SJ314-01L,S
FUJI POWER MOSFET
P-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
V
W
°C
-55 to +150
FAP-III SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item
Symbol
Zero gate voltage drain current
IDSS
Min.
Typ.
Max.
Units
V
μA
mA
nA
m
Ω
m
Ω
S
pF
ns
A
V
ns
μC
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
Rth(ch-a)
6.25
125.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
IDR
IDRM
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Continuous reverse drain current
Pulsed reverse drain current
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS= -60V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±20V VDS=0V
ID= -2.5A
VGS= -4V
VGS= -10V
ID=2.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -30V RG=25
Ω
ID= -3A
VGS= -10V
L=100μH
Tch=25°C
Tc=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/
μs Tch=25°C
-60
-1.0
-1.5
-2.5
-10
-500
-0.2
-1.0
10
100
280
480
200
300
2.0
4.5
500
750
200
300
120
180
15
23
20
30
100
150
80
120
-5
-20
-4.0
80
0.18
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
K-Pack(L)
K-Pack(S)
L-type
EIAJ
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ314-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SJ314-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ315 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (DC-DC CONVERTER) |
| 2SJ316 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ317 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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