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參數資料
| 型號： | 2SJ321 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 15A條（丁）|對220FN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 148K |
| 代理商： | 2SJ321 |
Application
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
Suitable for Switching regulator, DC – DC
converter
Avalanche Ratings
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Avalanche current
I
AP
***
———————————————————————————————————————————
Avalanche energy
E
AR
***
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
≥
50
Symbol
Ratings
Unit
–60
V
±20
V
–15
A
–60
A
–15
A
–15
A
19
mJ
30
W
150
°C
–55 to +150
°C
123
1
2
3
TO–220CFM
1. Gate
2. Drain
3. Source
2SJ321
Silicon P Channel MOS FET
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相關代理商/技術參數 |
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|---|---|
| 2SJ322 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220FN |
| 2SJ323 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220FN |
| 2SJ324 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ324-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 250m@10V TO251 Bulk |
| 2SJ324-Z | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |
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