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參數(shù)資料
| 型號： | 2SJ338-Y(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 116K |
| 代理商： | 2SJ338-Y(2-7B1B) |
2SJ338
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
2SJ338
Audio-Frequency Power Amplifier Applications
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2162
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
1
A
Power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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