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參數資料
| 型號： | 2SJ353 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 58K |
| 代理商： | 2SJ353 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
0.8 ±0.1
3.0
MAX.
0.6 ±0.1
1.7
GD S
1.5
4.0
MAX.
0.55 ±0.1
12.0
MIN.
9.0
MAX.
2.0
1.2
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Radial taping supported
Can be directly driven by output of 5-V IC
Low ON resistance
RDS(on) = 0.68
MAX. @VGS = –4 V, ID = –0.8 A
RDS(on) = 0.37
MAX. @VGS = –10 V, ID = –1.0 A
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
–60
V
Gate to Source Voltage
VGSS
VDS = 0
±20/+10
V
Drain Current (DC)
ID(DC)
±1.5
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms,
±3.0
A
Duty cycle
≤ 1 %
Total Power Dissipation
PT
1.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
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相關代理商/技術參數 |
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| 2SJ355 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
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| 2SJ355-T1(AZ) | 制造商:Renesas Electronics 功能描述:Pch -30V }2A 0.35 SOT89 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ355-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ356 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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