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參數(shù)資料
| 型號： | 2SJ377(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 408K |
| 代理商： | 2SJ377(2-7B1B) |
2SJ377
2009-07-13
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
2
πMOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.6 MAX.
2.3
6.8 MAX.
0.95 MAX.
0.6
± 0.15
5.
5
±
0.2
1.
7
±
0.2
12
.0
MIN.
2.5
M
A
X
.
1.1
±
0.
2
5.2
± 0.2
1
2
3
2.3
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ377Q | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive Applications |
| 2SJ378 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, DC−DC Converter and Motor Drive Applications |
| 2SJ378(TP,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 5A TPS |
| 2SJ378_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, DC−DC Converter and Motor Drive Applications |
| 2SJ378_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, DC−DC Converter and Motor Drive Applications |
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