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參數資料
| 型號： | 2SJ402(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 440K |
| 代理商： | 2SJ402(2-10S2B) |
2SJ402
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ402
DCDC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 29 m (typ.)
High forward transfer admittance
: |Yfs| = 23 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
30
A
Drain current
Pulse(Note 1)
IDP
120
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
936
mJ
Avalanche current
IAR
30
A
Repetitive avalenche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 747 H, RG = 25 ,
IAR = 30 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相關代理商/技術參數 |
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| 2SJ403 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SJ404 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB |
| 2SJ405 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB |
| 2SJ406 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P- Channel Silicon MOS FET Very High-Speed Switching Applications |
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