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參數資料
| 型號： | 2SJ438 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 409K |
| 代理商： | 2SJ438 |
2SJ438
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2πMOSV)
2SJ438
DCDC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
25
W
Single pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalenche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
5.0
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ438(AISIN,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態:停產 安裝類型:通孔 供應商器件封裝:TO-220NIS 封裝/外殼:TO-220-3 整包 標準包裝:1 |
| 2SJ438(AISIN,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態:停產 安裝類型:通孔 供應商器件封裝:TO-220NIS 封裝/外殼:TO-220-3 整包 標準包裝:1 |
| 2SJ438(CANO,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態:停產 安裝類型:通孔 供應商器件封裝:TO-220NIS 封裝/外殼:TO-220-3 整包 標準包裝:1 |
| 2SJ438(CANO,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態:停產 安裝類型:通孔 供應商器件封裝:TO-220NIS 封裝/外殼:TO-220-3 整包 標準包裝:1 |
| 2SJ438(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH - Rail/Tube |
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