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參數資料
| 型號： | 2SJ475-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | FAP-III Series |
| 中文描述： | 25 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 298K |
| 代理商： | 2SJ475-01 |
2SJ475-01
FAP-III Series
P-channel MOS-FET
0,06
-60V
25A
50W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ
W
°C
°C
-60
25
100
±20
325,9
50
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=-1mA
I
D
=-1mA
V
DS
=-60V
V
GS
=0V
V
GS
=±20V
I
D
=-12,5A
I
D
=-12,5A
I
D
=-12,5A
V
DS
=-25V
Min.
-60
-1,0
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=-4V
V
GS
=-10V
V
DS
=-25V
-1,5
-10
-0,2
10
0,08
0,045
-2,5
-500
-1,0
100
0,11
0,06
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
7,5
15
2000
700
450
15
80
190
90
3000
1050
680
25
120
290
140
V
GS
=0V
f=1MHz
V
CC
=-30V
I
D
=-25A
V
GS
=-10V
R
GS
=10
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L=100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
T
ch
=25°C
-25
-2,0
160
0,9
-3,0
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
75
2,50
Unit
°C/W
°C/W
Collmer Semconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ475-01_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ475-01SC | 制造商:Fuji Electric 功能描述: |
| 2SJ476-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ476-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ476-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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