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參數資料
| 型號： | 2SJ476-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 302K |
| 代理商： | 2SJ476-01S |
1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
-60
Continuous drain current
ID
±25
Pulsed drain current
ID(puls]
±100
Gate-source voltage
VGS
±20
Maximum avalanche energy *1
EAV
325.9
Maximum power dissipation(Tc=25°C)
PD
50
Operating and storage
Tch
+150
temperature range
Tstg
2SJ476-01L,S FUJIPOWERMOSFET
P-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
V
mJ
W
°C
-55 to +150
FAP-III SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item
Symbol
Zero gate voltage drain current
IDSS
Min.
Typ.
Max.
Units
V
μA
mA
nA
m
Ω
m
Ω
S
pF
ns
A
V
ns
μC
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
Rth(ch-a)
2.50
75
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS= -60V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±20V VDS=0V
ID= -12.5A
VGS= -4V
VGS= -10V
ID=12.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -30V RG=10
Ω
ID= -25A
VGS= -10V
L=100μH
Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/
μs Tch=25°C
-60
-1.0
-1.5
-2.5
-10
-500
-0.2
-1.0
10
100
80
110
45
60
7.5
15.0
2000
3000
700
1050
450
680
15
25
80
120
190
290
90
140
-25
-2
-3
160
0.9
Gate(G)
Source(S)
Drain(D)
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
*1 L=0.695mH, Vcc= -24V
www.fujielectric.co.jp/fdt/scd/
Outline Drawings
T-Pack(L)
T-Pack(S)
L-type
S-type
EIAJ
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PDF描述 |
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| 2SJ479L-E | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479STL-E | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ477-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ477-01MR_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
| 2SJ477-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SJ478 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ479 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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