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參數資料

2SJ483

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-519

1st. Edition

Features

Low on-resistance

DS(on) = 0.08 typ (at VGS = –10 V, ID = –2.5 A)

4V gate drive devices.

Large current capacitance

D = –5 A

Outline

TO-92MOD.

1. Source

2. Drain

3. Gate

相關PDF資料	PDF描述
2SJ484WYTL-E	2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ485(TP-FA)	4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ486ZU-TR-E	300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ491-4072	20 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
2SK2821-4072	70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

相關代理商/技術參數	參數描述
2SJ483TZ-E	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ484	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ484WY(TL-E)	制造商:Renesas Electronics Corporation 功能描述:
2SJ484WYTL-E	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ484WYTR-E	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET

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