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參數資料
| 型號： | 2SJ494-AZ |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.088 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 71K |
| 代理商： | 2SJ494-AZ |
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
1998
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
RDS(on)1 = 50 m
: Max. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 88 m
: Max. (VGS = –4 V, ID = –10 A)
Low Ciss
Ciss = 2360 pF Typ.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–60
V
Gate to Source Voltage*
VGSS (AC)
+20
V
Gate to Source Voltage
VGSS (DC)
–20, 0
V
Drain Current (DC)
ID (DC)
+20
A
Drain Current (pulse)**
ID (pulse)
+80
A
Total Power Dissipation (TC = 25 °C)
PT
35
W
Total Power Dissipation (TA = 25 °C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
* f = 20 kHz, Duty Cycle
d 10% (+Side)
** PW
d 10
Ps, Duty Cycle d 1%
THERMAL RESISTANCE
Channel to Case
Rth (ch-C)
3.57 °C/W
Channel to Ambient
Rth (ch-A)
62.5 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.2
0.7±0.1
2.54
1.5±0.2
12 3
4±0.2
13.5
MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
ISOLATED TO-220 (MP-45F)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
–
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| 2SJ495 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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