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參數(shù)資料
型號(hào): 2SJ495-AZ
元件分類: JFETs
英文描述: 30 A, 60 V, 0.056 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 75K
代理商: 2SJ495-AZ
1997
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
RDS(on)1 = 30 m
MAX. (VGS = –10 V, ID = –15 A)
RDS(on)2 = 56 m
MAX. (VGS = –4 V, ID = –15 A)
Low Ciss Ciss = 4120 pF TYP.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
–60
V
Gate to Source Voltage*
VGSS(AC)
m20
V
Gate to Source Voltage
VGSS(DC)
–20, 0
V
Drain Current (DC)
ID(DC)
m30
A
Drain Current (pulse)**
ID(pulse)
m120
A
Total Power Dissipation (TC = 25
°C)
PT
35
W
Total Power Dissipation (TA = 25
°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
*f = 20 kHz, Duty Cycle
≤ 10% (+Side)
**PW
≤ 10
s, Duty Cycle ≤ 1%
THERMAL RESISTANCE
MP-45F (ISOLATED TO-220)
Channel to Case
Rth(ch-c)
3.57
°C/W
Channel to Ambient
Rth(ch-A)
62.5
°C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
2.54
1.5 ± 0.2
1.3 ± 0.2
2.5 ± 0.1
1. Gate
2. Drain
3. Source
0.65 ± 0.1
0.7 ± 0.1
10.0 ± 0.3
4.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
15.0
±
0.3
12.0
±
0.2
13.5
MIN.
4
±
0.2
3
±
0.1
2
13
Gate
Drain
Body
Diode
Gate Protection
Diode
Source
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SJ496TZ-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R
2SJ498 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FIELD-EFFECT TRANSISTOR
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