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參數資料
型號: 2SJ508
元件分類: 小信號晶體管
英文描述: 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 2-5K1B, 3 PIN
文件頁數: 1/3頁
文件大小: 147K
代理商: 2SJ508
2SJ508
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ508
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 1.35 (typ.)
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Low leakage current : IDSS = 100 A (VDS = 100 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
1
A
Drain current
Pulse (Note 1)
IDP
3
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
136.5
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
250
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
Z
E
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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