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參數資料
型號: 2SJ516
元件分類: JFETs
英文描述: 6.5 A, 250 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: 2-10R1B, SC-67, 3 PIN
文件頁數: 1/6頁
文件大小: 411K
代理商: 2SJ516
2SJ516
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (πMOSV)
2SJ516
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance : RDS (ON) = 0.6 (typ.)
High forward transfer admittance : |Yfs| = 5.3 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
Enhancementmode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
6.5
A
Drain current
Pulse (Note 1)
IDP
13
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
157
mJ
Avalanche current
IAR
6.5
A
Repetitive avalenche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.57
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 , IAR = 6.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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