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參數資料
| 型號： | 2SJ567(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7B1B, SC-64, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 361K |
| 代理商： | 2SJ567(2-7B1B) |
2SJ567
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
Enhancement-model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 k)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain current
Pulse
(Note 1)
IDP
10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25.2 mH, IAR = 2.5 A
RG = 25 ,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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