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參數資料
| 型號： | 2SJ581-AZ |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-10, ISOLATED TO-220, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 38K |
| 代理商： | 2SJ581-AZ |
1999
MOS FIELD EFFECT TRANSISTOR
2SJ581
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14113EJ1V0PM00
Date Published February 1999 NS CP (K)
Printed in Japan
PRELIMINARY PRODUCT INFORMATION
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
ORDERING INFORMATION
The 2SJ581 is P-Channel DMOS Field Effect Transistor that
features a low on-resistance and excellent switching
characteristics, designed for high current switching applications
such as DC to DC converter and load switch.
FEATURES
Low on-state resistance :
RDS(on)1 = 70 m
TYP. (VGS = 10 V, ID = 6 A)
RDS(on)2 = 120 m
TYP. (VGS = 4 V, ID = 6 A)
Low input capacitance :
Ciss = 1210 pF TYP. (VDS =
10 V, f = 1MHz)
Narrow gate cut-off voltage width :
VGS(off) =
1.0 to 2.0 V
Built-in gate protection diode.
Suitable to automatically assembling.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
20, 0
V
Drain Current (DC)
ID(DC)
±12
A
Drain Current (pulse)
Note
ID(pulse)
±48
A
Total Power Dissipation (TA = 25 °C)
PT
1.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1 %
PART NUMBER
PACKAGE
2SJ581
MP-10
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ583 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ583LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ584LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ585LS | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 250V 6.5A TO-220FI |
| 2SJ586 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
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