欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: 2SJ583LS
元件分類: JFETs
英文描述: 3.5 A, 250 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: TO-220FI-LS, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 42K
代理商: 2SJ583LS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6409
2SJ583LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2754 No.6409–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2078B
[2SJ583LS]
Features
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
PW
≤10s, duty cycle≤1%
Continued on next page.
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
2.4
2.55
1
2
3
3.2
0.7
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
0
5
2
–V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
0
3
±V
)
C
D
(
t
n
e
r
u
C
n
i
a
r
DID
5
.
3
–A
)
e
s
l
u
P
(
t
n
e
r
u
C
n
i
a
r
DI P
D
4
1
–A
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
0
.
2W
0
2W
e
r
u
t
a
r
e
p
m
e
T
l
e
n
a
h
Ch
c
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
Tc=25
°C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
)
R
B
(
ID
V
,
A
m
1
=
S
G
0
=0
5
2
–V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
)
R
B
(
IG
V
,
A
0
1
±
=
S
D
0
=0
3
±V
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
-
o
r
e
ZI
S
D
V S
D
V
,
V
0
5
2
=
S
G
0
=0
0
1
–A
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
r
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
5
2
±
=
S
D
0
=0
1
±A
e
g
a
t
l
o
V
f
o
t
u
CV S
G
)
f
o
(V S
D
I
,
V
0
1
=
D
A
m
1
=5
.
3
–0
.
5
–V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
I
,
V
0
1
=
D
A
2
=2
.
10
.
2S
e
c
n
a
t
s
i
s
e
R
e
t
a
t
S
-
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
c
i
t
a
t
SR S
D
)
n
o
(ID
V
,
A
2
=
S
G
V
0
1
=2
.
15
.
1
相關PDF資料
PDF描述
2SJ595TP-FA 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ595TP 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ596(TP) 8000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ596(TP-FA) 8000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ598-Z 12000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
相關代理商/技術參數(shù)
參數(shù)描述
2SJ584LS 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
2SJ585LS 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 250V 6.5A TO-220FI
2SJ586 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching
2SJ587 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching
2SJ588 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching
主站蜘蛛池模板: 若尔盖县| 石棉县| 大埔县| 恩平市| 建平县| 永泰县| 武强县| 阿鲁科尔沁旗| 安新县| 永德县| 江口县| 大安市| 同心县| 治县。| 高邑县| 梓潼县| 乌拉特中旗| 江门市| 榆林市| 鸡西市| 宾阳县| 喀喇沁旗| 苏州市| 沅陵县| 富平县| 城市| 饶河县| 磐安县| 湖口县| 繁昌县| 二连浩特市| 通化市| 饶河县| 浪卡子县| 屏东市| 大理市| 钟祥市| 安平县| 贵南县| 老河口市| 博乐市|