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參數資料
| 型號： | 2SJ605-ZJ-AZ |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, TO-263, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 84K |
| 代理商： | 2SJ605-ZJ-AZ |
2000
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
! shows major revised points.
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 20 m
MAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 m
MAX. (VGS = –4.0 V, ID = –33 A)
Low input capacitance
Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m 65
A
Drain Current (pulse)
Note1
ID(pulse)
m 200
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
–45
A
Single Avalanche Energy
Note2
EAS
203
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25
, VGS = –20
→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
TO-263
2SJ605-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
!
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ606-ZJ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606 | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ606-Z | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ606-ZJ-AZ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606-S | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ605-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ606 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ606-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,12m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB |
| 2SJ606-S | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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