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參數資料
| 型號： | 2SJ625-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 66K |
| 代理商： | 2SJ625-A |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15961EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The 2SJ625 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
RDS(on)1 = 113 m
MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 171 m
MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)3 = 314 m
MAX. (VGS = –1.8 V, ID = –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ625
SC-96 (Mini Mold Thin Type)
Marking: XM
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m3.0
A
Drain Current (pulse)
Note1
ID(pulse)
m12
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t
≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| 2SJ634-TL | 8000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ625-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ625-T1B-A/XM | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ626-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R |
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