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參數資料
型號: 2SJ626-A
元件分類: 小信號晶體管
英文描述: 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-96, 3 PIN
文件頁數: 1/8頁
文件大小: 65K
代理商: 2SJ626-A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15962EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly
by a 4.0 V power source.
The 2SJ626 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
4.0 V drive available
Low on-state resistance
RDS(on)1 = 388 m
MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 514 m
MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 556 m
MAX. (VGS = –4.0 V, ID = –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ626
SC-96 (Mini Mold Thin Type)
Marking: XN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m1.5
A
Drain Current (pulse)
Note1
ID(pulse)
m6.0
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t
≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關PDF資料
PDF描述
2SJ626 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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2SJ654 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相關代理商/技術參數
參數描述
2SJ626-T1B 制造商:Renesas Electronics Corporation 功能描述:
2SJ626-T1B-A 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R
2SJ628 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ629 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SJ630 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
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