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參數(shù)資料
| 型號(hào)： | 2SJ676 |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 144K |
| 代理商： | 2SJ676 |
2SJ676
2004-08-31
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (
πMOS V)
2SJ676
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Low drainsource ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
Enhancement mode: Vth = 1.5 to 3.5 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Draingate voltage (RGS = 20 k)
VDGR
200
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
A
Drain current
Pulse(Note 1)
IDP
10
A
Drain power dissipation
PD
1.3
W
Single-pulse avalanche energy
(Note 2)
EAS
191
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 48.6 mH,
RG = 25 , IAR = 2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
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