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參數資料
| 型號： | 2SK1061 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-4E1E, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 279K |
| 代理商： | 2SK1061 |
2SK1061
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 0.6 (typ.)
Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
200
Drain current
Pulse
IDP
800
mA
Drain power dissipation (Ta
= 25°C)
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1E
Weight: 0.13 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1061(F) | 制造商:Toshiba 功能描述:Nch 60V 200mA 0.6@10V MINI Bulk |
| 2SK1061_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High Speed Switching Applications |
| 2SK1062 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1062(F) | 制造商:Toshiba 功能描述:Nch 60V 200mA S-MINI(1.5~2.9) Bulk |
| 2SK1062(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin SMini T/R 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
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