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參數(shù)資料
| 型號(hào)： | 2SK123 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 2 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | MINI3-G1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 30K |
| 代理商： | 2SK123 |
1
Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel J unction FET
unit: mm
For impedance conversion in low frequency
For electret capacitor microphone
I
Features
G
High mutual conductance g
m
G
Low noise voltage of NV
1: Drain
2: Source
3: Gate
Mini Flat Package (3-pin)
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
20
20
2
2
2
200
20 to +80
55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
Symbol
I
D
I
DSS
g
m
NV
G
V1
G
V2
G
V3
|G
V2
G
V1
|
|G
V1
G
V3
|
Conditions
V
D
= 4.5V, C
O
= 10pF, R
D
= 2.2k
± 1%
V
DS
= 4.5V, V
GS
= 0
V
D
= 4.5V, V
GS
= 0, f = 1kHz
V
D
= 4.5V, R
D
= 2.2k
± 1%
C
O
= 10pF, A-curve
V
D
= 4.5V, R
D
= 2.2k
± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 12V, R
D
= 2.2k
± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 1.5V, R
D
= 2.2k
± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
min
100
95
0.7
3
0
4.5
0
0
max
600
480
4
+3.5
+3.5
Unit
μ
A
μ
A
mS
μ
V
dB
dB
dB
dB
dB
typ
1.6
2
3.3
0.3
0
+
0
0
2
+
0
0
0
+
0
0
0
+
0
0
1
+
0
0
0
+
0
0
2.4
±
0.1
1.9
±
0.1
1
±
0
0
0
0
1
1.5
+
0.25
5.8
+
0.2
0.3
1
2
3
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
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