
2SK1280
F-V Series
N-channel MOS-FET
0,5
500V
18A
150W
> Features
-
Include Fast Recovery Diode
-
High Voltage
-
Low Driving Power
> Outline Drawing
> Applications
-
Motor Control
-
Inverters
-
Choppers
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
A
V
W
°C
°C
500
18
72
18
±20
150
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=10mA V
DS=
V
GS
V
DS
=500V
V
GS
=0V
V
GS
=±20V
I
D
=9A
I
D
=9A
V
DS
=25V
Min.
500
2,1
Typ.
Max.
Unit
V
V
μA
V
GS
=0V
3,0
10
4,0
500
T
ch
=25°C
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
V
DS
=0V
V
GS
=10V
V
DS
=25V
10
100
0,5
nA
S
pF
pF
pF
ns
ns
ns
ns
V
ns
0,35
15
2400
300
150
35
150
450
180
0,85
150
8
3600
450
220
50
220
650
270
1,6
200
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=18A
V
GS
=10V
R
GS
=25
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
I
F
=I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
0,83
Unit
°C/W
°C/W
Collmer Semconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com