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參數(shù)資料
| 型號(hào)： | 2SK1590A-T1B-AT |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, MINIMOLD, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 488K |
| 代理商： | 2SK1590A-T1B-AT |
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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MOS FIELD EFFECT TRANSISTOR
2SK1590A
N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17875EJ1V0DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
1990
FEATURES
Directly driven by ICs having a 5 V power source.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1590A-T1B-AT
2SK1590A-T2B-AT
SC-59 (Mini Mold)
Marking: G16
Remark “-AT” indicates Pb-free (This product does not contain
Pb in external electrode and other parts.). “-T1B”,
“-T2B” indicates the unit orientation (8 mm embossed
carrier tape, 3,000 pcs/reel).
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±200
mA
Drain Current (pulse)
Note
ID(pulse)
±400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit: mm)
1: Source
2: Gate
3: Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1590 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1590-A | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1591 | 200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1595 | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1596 | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1590-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin SC-59 |
| 2SK1591 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1591-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1591-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 0.2A 3-Pin SC-59 |
| 2SK1592 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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