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參數資料
| 型號： | 2SK1658-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 53K |
| 代理商： | 2SK1658-A |
1991
MOS FIELD EFFECT TRANSISTOR
2SK1658
N-CHANNEL MOS FET
FOR SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
PACKAGE DRAWING (Unit : mm)
1.25 ±0.1
2.1 ±0.1
D
0.3
+0.1
–0.05
0.3
+0.1 –0
G
S
2.0
±0.2
0.65
0.15
+0.1
–0.05
0
to
0.1
0.3
0.9
±0.1
Marking
DESCRIPTION
The 2SK1658 is an N -channel vertical type MOS FET which can be
driven by 2.5 V power supply.
As the MOS FET is low Gate Leakage Current, it is suitable for appliances
including Filter Circuit.
FEATURES
Directly driven by ICs having a 3 V power supply.
Has low Gate Leakage Current
IGSS = ±5 nA MAX. (VGS = ±3.0 V)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±100
mA
Drain Current (pulse)
Note
ID(pulse)
±200
mA
Total Power Dissipation (TA = 25°C)
PT
150
mW
Channel Temperature
Tch
150
°C
Operating Temperature
Topt
55 to +80
°C
Storage Temperature
Tstg
55 to +150 °C
Note. PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Document No. G15638EJ2V0DS00 (2nd edition)
(Previous No. TC-2361)
Date Published June 2001 NS CP (K)
Printed in Japan
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PDF描述 |
|---|---|
| 2SK1666 | 0.035 ohm, POWER, FET |
| 2SK1667-E | 7 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1728 | 1 A, 100 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1760 | 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1762-E | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1658-T1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 25 SC70 Cut Tape |
| 2SK1667(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1668(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1670(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1671 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 250V 30A 3PIN TO-P - Rail/Tube 制造商:Distributed By MCM 功能描述:250V 30A 10W Gds Hitachi Fet TO-3P N-Ch |
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