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參數資料
| 型號： | 2SK1739A |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-22C2A, 4 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 201K |
| 代理商： | 2SK1739A |
2SK1739A
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1739A
RF Power MOS FET for UHF TV Broadcast Transmitter
Output Power
: Po ≥ 90 W (min.)
Drain Efficiency
: ηD = 50% (typ.)
Frequency
: f = 770 MHz
PushPull Structure Package
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
11
A
Reverse Drain Current
IDR
11
A
Drain Power Dissipation
PD
250
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
—
JEITA
—
TOSHIBA
222C2A
Weight: 17.5 g (typ.)
Unit in mm
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