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參數資料
| 型號： | 2SK1825 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-4E1E, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 281K |
| 代理商： | 2SK1825 |
2SK1825
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1825
High Speed Switching Applications
Analog Switch Applications
4 V gate drive
Low threshold voltage: Vth = 0.8~2.5 V
High speed
Enhancement-mode
Small package
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
50
V
Gate-source voltage
VGSS
10
V
DC drain current
ID
50
mA
Drain power dissipation
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1E
Weight: 0.13 g (typ.)
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