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參數資料
型號: 2SK1842
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon N-Channel Junction FET
中文描述: 1 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
封裝: MINI3-G1, SC-59, 3 PIN
文件頁數: 1/2頁
文件大小: 32K
代理商: 2SK1842
1
Silicon Junction FETs (Small Signal)
2SK1842
Silicon N-Channel J unction FET
unit: mm
For impedance conversion in low frequency
For infrared sensor
I
Features
G
Low gate to source leakage current, I
GSS
G
Small capacitance
of C
iss
, C
oss
, C
rss
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
40
40
1
10
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
C
iss
C
oss
C
rss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
20V, V
DS
= 0
I
G
=
10
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 1
μ
A
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
30
40
0.05
max
200
0.5
3
Unit
μ
A
nA
V
V
mS
pF
pF
pF
*
I
DSS
rank classification
typ
1.3
1
0.4
0.4
Runk
I
DSS
(mA)
Marking Symbol
O
30 to 75
EBP
P
50 to 100
EBQ
Q
70 to 130
EBR
R
100 to 200
EBS
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): EB
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15
0.65±0.15
3
1
2
0
0
1
0
+
1
+
0
0.4±0.2
0
0
+
1
0.1 to 0.3
2
+
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